2023
Thompson, Sarah M.; Şahin, Cüneyt; Yang, Shengsong; Flatté, Michael E.; Murray, Christopher B.; Bassett, Lee C.; Kagan, Cherie R.
Red Emission from Copper-Vacancy Color Centers in Zinc Sulfide Colloidal Nanocrystals Journal Article
In: ACS Nano, vol. 17, no. 6, pp. 5963-5973, 2023.
@article{Thompson2023,
title = {Red Emission from Copper-Vacancy Color Centers in Zinc Sulfide Colloidal Nanocrystals},
author = {Sarah M. Thompson and Cüneyt Şahin and Shengsong Yang and Michael E. Flatté and Christopher B. Murray and Lee C. Bassett and Cherie R. Kagan},
url = {https://pubs.acs.org/doi/full/10.1021/acsnano.3c00191
https://arxiv.org/abs/2301.04223},
doi = {10.1021/acsnano.3c00191},
year = {2023},
date = {2023-03-09},
urldate = {2023-03-09},
journal = {ACS Nano},
volume = {17},
number = {6},
pages = {5963-5973},
abstract = {Copper-doped zinc sulfide (ZnS:Cu) exhibits down-conversion luminescence in the UV, visible, and IR regions of the electromagnetic spectrum; the visible red, green, and blue emission is referred to as R-Cu, G-Cu, and B-Cu, respectively. The sub-bandgap emission arises from optical transitions between localized electronic states created by point defects, making ZnS:Cu a prolific phosphor material and an intriguing candidate material for quantum information science, where point defects excel as single-photon sources and spin qubits. Colloidal nanocrystals (NCs) of ZnS:Cu are particularly interesting as hosts for the creation, isolation, and measurement of quantum defects, since their size, composition, and surface chemistry can be precisely tailored for bio-sensing and opto-electronic applications. Here, we present a method for synthesizing colloidal ZnS:Cu NCs that emit primarily R-Cu, which has been proposed to arise from the Cu_{Zn}-V_{S} complex, an impurity-vacancy point defect structure analogous to well-known quantum defects in other materials that produce favorable optical and spin dynamics. First principles calculations confirm the thermodynamic stability and electronic structure of Cu_{Zn}-V_{S}. Temperature- and time-dependent optical properties of ZnS:Cu NCs show blueshifting luminescence and an anomalous plateau in the intensity dependence as temperature is increased from 19 K to 290 K, for which we propose an empirical dynamical model based on thermally-activated coupling between two manifolds of states inside the ZnS bandgap. Understanding of R-Cu emission dynamics, combined with a controlled synthesis method for obtaining R-Cu centers in colloidal NC hosts, will greatly facilitate the development of Cu_{Zn}-V_{S} and related complexes as quantum point defects in ZnS.},
keywords = {color centers, doping, impurities, nanocrystal, optical properties, quantum information science, time-resolved photoluminescence, transition metals, zinc sulfide},
pubstate = {published},
tppubtype = {article}
}
Copper-doped zinc sulfide (ZnS:Cu) exhibits down-conversion luminescence in the UV, visible, and IR regions of the electromagnetic spectrum; the visible red, green, and blue emission is referred to as R-Cu, G-Cu, and B-Cu, respectively. The sub-bandgap emission arises from optical transitions between localized electronic states created by point defects, making ZnS:Cu a prolific phosphor material and an intriguing candidate material for quantum information science, where point defects excel as single-photon sources and spin qubits. Colloidal nanocrystals (NCs) of ZnS:Cu are particularly interesting as hosts for the creation, isolation, and measurement of quantum defects, since their size, composition, and surface chemistry can be precisely tailored for bio-sensing and opto-electronic applications. Here, we present a method for synthesizing colloidal ZnS:Cu NCs that emit primarily R-Cu, which has been proposed to arise from the CuZn-VS complex, an impurity-vacancy point defect structure analogous to well-known quantum defects in other materials that produce favorable optical and spin dynamics. First principles calculations confirm the thermodynamic stability and electronic structure of CuZn-VS. Temperature- and time-dependent optical properties of ZnS:Cu NCs show blueshifting luminescence and an anomalous plateau in the intensity dependence as temperature is increased from 19 K to 290 K, for which we propose an empirical dynamical model based on thermally-activated coupling between two manifolds of states inside the ZnS bandgap. Understanding of R-Cu emission dynamics, combined with a controlled synthesis method for obtaining R-Cu centers in colloidal NC hosts, will greatly facilitate the development of CuZn-VS and related complexes as quantum point defects in ZnS.
2018
Yang, Haoran; Wong, Eric; Zhao, Tianshuo; Lee, Jennifer D.; Xin, Huolin L.; Chi, Miaofang; Fleury, Blaise; Tang, Han-Yu; Gaulding, E. Ashley; Kagan, Cherie R.; Murray, Christopher B.
Charge Transport Modulation in PbSe Nanocrystal Solids by AuxAg1–x Nanoparticle Doping Journal Article
In: ACS Nano, vol. 12, no. 9, pp. 9091–9100, 2018.
@article{Yang2018,
title = {Charge Transport Modulation in PbSe Nanocrystal Solids by AuxAg1–x Nanoparticle Doping},
author = {Haoran Yang and Eric Wong and Tianshuo Zhao and Jennifer D. Lee and Huolin L. Xin and Miaofang Chi and Blaise Fleury and Han-Yu Tang and E. Ashley Gaulding and Cherie R. Kagan and Christopher B. Murray},
url = {https://pubs.acs.org/doi/10.1021/acsnano.8b03112},
doi = {10.1021/acsnano.8b03112},
year = {2018},
date = {2018-08-27},
journal = {ACS Nano},
volume = {12},
number = {9},
pages = {9091–9100},
abstract = {Nanocrystal (NC) solids are an exciting class of materials, whose physical properties are tunable by choice of the NCs as well as the strength of the interparticle coupling. One can consider these NCs as “artificial atoms” in analogy to the formation of condensed matter from atoms. Akin to atomic doping, the doping of a semiconducting NC solid with impurity NCs can drastically alter its electronic properties. A high degree of complexity is possible in these artificial structures by adjusting the size, shape, and composition of the building blocks, which enables “designer” materials with targeted properties. Here, we present the doping of the PbSe NC solids with a series of AuxAg1–x alloy nanoparticles (NPs). A combination of temperature-dependent electrical conductance and Seebeck coefficient measurements and room-temperature Hall effect measurements demonstrates that the incorporation of metal NPs both modifies the charge carrier density of the NC solids and introduces energy barriers for charge transport. These studies point to charge carrier injection from the metal NPs into the PbSe NC matrix. The charge carrier density and charge transport dynamics in the doped NC solids are adjustable in a wide range by employing the AuxAg1–x NP with different Au:Ag ratio as dopants. This doping strategy could be of great interest for thermoelectric applications taking advantage of the energy filtering effect introduced by the metal NPs.},
keywords = {doping, nanocrystal electronics, transport},
pubstate = {published},
tppubtype = {article}
}
Nanocrystal (NC) solids are an exciting class of materials, whose physical properties are tunable by choice of the NCs as well as the strength of the interparticle coupling. One can consider these NCs as “artificial atoms” in analogy to the formation of condensed matter from atoms. Akin to atomic doping, the doping of a semiconducting NC solid with impurity NCs can drastically alter its electronic properties. A high degree of complexity is possible in these artificial structures by adjusting the size, shape, and composition of the building blocks, which enables “designer” materials with targeted properties. Here, we present the doping of the PbSe NC solids with a series of AuxAg1–x alloy nanoparticles (NPs). A combination of temperature-dependent electrical conductance and Seebeck coefficient measurements and room-temperature Hall effect measurements demonstrates that the incorporation of metal NPs both modifies the charge carrier density of the NC solids and introduces energy barriers for charge transport. These studies point to charge carrier injection from the metal NPs into the PbSe NC matrix. The charge carrier density and charge transport dynamics in the doped NC solids are adjustable in a wide range by employing the AuxAg1–x NP with different Au:Ag ratio as dopants. This doping strategy could be of great interest for thermoelectric applications taking advantage of the energy filtering effect introduced by the metal NPs.
Zhao, Qinghua; Zhao, Tianshuo; Guo, Jiacen; Chen, Wenxiang; Zhang, Mingliang; Kagan, Cherie R.
The Effect of Dielectric Environment on Doping Efficiency in Colloidal PbSe Nanostructures Journal Article
In: ACS Nano, vol. 12, no. 2, pp. 1313–1320, 2018.
@article{Zhao2018,
title = {The Effect of Dielectric Environment on Doping Efficiency in Colloidal PbSe Nanostructures},
author = {Qinghua Zhao and Tianshuo Zhao and Jiacen Guo and Wenxiang Chen and Mingliang Zhang and Cherie R. Kagan},
url = {https://pubs.acs.org/doi/10.1021/acsnano.7b07602},
doi = {10.1021/acsnano.7b07602},
year = {2018},
date = {2018-01-18},
journal = {ACS Nano},
volume = {12},
number = {2},
pages = {1313–1320},
abstract = {Doping, as a central strategy to control free carrier type and concentration in semiconductor materials, suffers from low efficiency at the nanoscale, especially in systems having high permittivity (ϵ) and large Bohr radii, such as lead chalcogenide nanocrystals (NCs) and nanowires (NWs). Here, we study dielectric confinement effects on the doping efficiency of lead chalcogenides nanostructures by integrating PbSe NWs in the platform of field effect transistors (FETs). Elemental Pb or In or elemental Se is deposited by thermal evaporation to remotely n- or p-dope the NWs. Polymeric and oxide materials of varying ϵ are subsequently deposited to control the dielectric environment surrounding the NWs. Analyzing the device characteristics, we extract the change of carrier concentration introduced by tailoring the dielectric environment. The calculated doping efficiency for n-type (Pb/In) and p-type (Se) dopants increases as the ϵ of the surrounding medium increases. Using a high-ϵ material, such as HfO2 for encapsulation, the doping efficiency can be enhanced by >10-fold. A theoretical model is built to describe the doping efficiency in PbSe NWs embedded in different dielectric environments, which agrees with our experimental data for both NW array and single NW devices. As dielectric confinement affects all low-dimensional materials, engineering the dielectric environment is a promising general approach to enhance doping concentrations, without introducing excess impurities that may scatter carriers, and is suitable for various device applications.},
keywords = {doping, nanocrystal electronics},
pubstate = {published},
tppubtype = {article}
}
Doping, as a central strategy to control free carrier type and concentration in semiconductor materials, suffers from low efficiency at the nanoscale, especially in systems having high permittivity (ϵ) and large Bohr radii, such as lead chalcogenide nanocrystals (NCs) and nanowires (NWs). Here, we study dielectric confinement effects on the doping efficiency of lead chalcogenides nanostructures by integrating PbSe NWs in the platform of field effect transistors (FETs). Elemental Pb or In or elemental Se is deposited by thermal evaporation to remotely n- or p-dope the NWs. Polymeric and oxide materials of varying ϵ are subsequently deposited to control the dielectric environment surrounding the NWs. Analyzing the device characteristics, we extract the change of carrier concentration introduced by tailoring the dielectric environment. The calculated doping efficiency for n-type (Pb/In) and p-type (Se) dopants increases as the ϵ of the surrounding medium increases. Using a high-ϵ material, such as HfO2 for encapsulation, the doping efficiency can be enhanced by >10-fold. A theoretical model is built to describe the doping efficiency in PbSe NWs embedded in different dielectric environments, which agrees with our experimental data for both NW array and single NW devices. As dielectric confinement affects all low-dimensional materials, engineering the dielectric environment is a promising general approach to enhance doping concentrations, without introducing excess impurities that may scatter carriers, and is suitable for various device applications.
2015
Oh, Soong Ju; Uswachoke, Chawit; Zhao, Tianshuo; Choi, Ji-Hyuk; Diroll, Benjamin T.; Murray, Christopher B.; Kagan, Cherie R.
Selective p- and n-Doping of Colloidal PbSe Nanowires To Construct Electronic and Optoelectronic Devices Journal Article
In: ACS Nano, vol. 9, iss. 7, pp. 7536–7544, 2015.
@article{Oh2015,
title = {Selective p- and n-Doping of Colloidal PbSe Nanowires To Construct Electronic and Optoelectronic Devices},
author = {Soong Ju Oh and Chawit Uswachoke and Tianshuo Zhao and Ji-Hyuk Choi and Benjamin T. Diroll and Christopher B. Murray and Cherie R. Kagan},
url = {https://pubs.acs.org/doi/abs/10.1021/acsnano.5b02734},
doi = {10.1021/acsnano.5b02734},
year = {2015},
date = {2015-06-12},
urldate = {2015-06-12},
journal = {ACS Nano},
volume = {9},
issue = {7},
pages = {7536–7544},
abstract = {We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.},
keywords = {doping, nanocrystal electronics, nanowires, PbSe},
pubstate = {published},
tppubtype = {article}
}
We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.
2014
Oh, Soong Ju; Wang, Zhuqing; Berry, Nathaniel E.; Choi, Ji-Hyuk; Zhao, Tianshuo; Gaulding, E. Ashley; Paik, Taejong; Lai, Yuming; Murray, Christopher B.; Kagan, Cherie R.
Engineering Charge Injection and Charge Transport for High Performance PbSe Nanocrystal Thin Film Devices and Circuits Journal Article
In: Nano Letters, vol. 14, no. 11, pp. 6210–6216, 2014.
@article{Oh2014,
title = {Engineering Charge Injection and Charge Transport for High Performance PbSe Nanocrystal Thin Film Devices and Circuits},
author = {Soong Ju Oh and Zhuqing Wang and Nathaniel E. Berry and Ji-Hyuk Choi and Tianshuo Zhao and E. Ashley Gaulding and Taejong Paik and Yuming Lai and Christopher B. Murray and Cherie R. Kagan},
url = {https://pubs.acs.org/doi/full/10.1021/nl502491d},
doi = {10.1021/nl502491d},
year = {2014},
date = {2014-10-09},
journal = {Nano Letters},
volume = {14},
number = {11},
pages = {6210–6216},
abstract = {We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal–nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.},
keywords = {doping, interfaces, ligand exchange, mobility, nanocrystal, nanocrystal electronics, PbSe, surface interactions, surface modification, thin films, transistors, transport},
pubstate = {published},
tppubtype = {article}
}
We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal–nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.
Diroll, Benjamin T.; Gordon, Thomas R.; Gaulding, E. Ashley; Klein, Dahlia R.; Paik, Taejong; Yun, Hyeong Jin; Goodwin, E. D.; Damodhar, Divij; Kagan, Cherie R.; Murray, Christopher B.
Synthesis of N-Type Plasmonic Oxide Nanocrystals and the Optical and Electrical Characterization of their Transparent Conducting Films Journal Article
In: Chemistry of Materials, vol. 26, no. 15, pp. 4579–4588, 2014.
@article{Diroll2014b,
title = {Synthesis of N-Type Plasmonic Oxide Nanocrystals and the Optical and Electrical Characterization of their Transparent Conducting Films},
author = {Benjamin T. Diroll and Thomas R. Gordon and E. Ashley Gaulding and Dahlia R. Klein and Taejong Paik and Hyeong Jin Yun and E.D. Goodwin and Divij Damodhar and Cherie R. Kagan and Christopher B. Murray},
url = {https://pubs.acs.org/doi/full/10.1021/cm5018823},
doi = {10.1021/cm5018823},
year = {2014},
date = {2014-07-18},
journal = {Chemistry of Materials},
volume = {26},
number = {15},
pages = {4579–4588},
abstract = {We present a general synthesis for a family of n-type transparent conducting oxide nanocrystals through doping with aliovalent cations. These monodisperse nanocrystals exhibit localized surface plasmon resonances tunable in the mid- and near-infrared with increasing dopant concentration. We employ a battery of electrical measurements to demonstrate that the plasmonic resonance in isolated particles is consistent with the electronic properties of oxide nanocrystal thin films. Hall and Seebeck measurements show that the particles form degenerately doped n-type solids with free electron concentrations in the range of 1019 to 1021 cm–3. These heavily doped oxide nanocrystals are used as the building blocks of conductive, n-type thin films with high visible light transparency.},
keywords = {doping, nanocrystal, nanocrystal electronics, optical properties, plasmonic, thin films},
pubstate = {published},
tppubtype = {article}
}
We present a general synthesis for a family of n-type transparent conducting oxide nanocrystals through doping with aliovalent cations. These monodisperse nanocrystals exhibit localized surface plasmon resonances tunable in the mid- and near-infrared with increasing dopant concentration. We employ a battery of electrical measurements to demonstrate that the plasmonic resonance in isolated particles is consistent with the electronic properties of oxide nanocrystal thin films. Hall and Seebeck measurements show that the particles form degenerately doped n-type solids with free electron concentrations in the range of 1019 to 1021 cm–3. These heavily doped oxide nanocrystals are used as the building blocks of conductive, n-type thin films with high visible light transparency.
2014
“Designing High-Performance PbS and PbSe Nanocrystal Electronic Devices through Stepwise, Post-Synthesis, Colloidal Atomic Layer Deposition,” Soong Ju Oh, Nathaniel E. Berry, Ji-Hyuk Choi, E. Ashley Gaulding, Hangfei Lin, Taejong Paik, Benjamin. T. Diroll, Shin Muramoto, Christopher B. Murray, and Cherie R. Kagan NANO Letters, 14 (3) 1559-1566 (2014)
“Air-Stable, Nanostructured Electronic and Plasmonic Materials from Solution-Processable, Silver Nanocrystal Building Blocks,” Aaron T. Fafarman, Sung-Hoon Hong, Soong Ju Oh, Humeyra Caglayan, Xingchen Ye, Benjamin T. Diroll, Nader Engheta, Christopher B. Murray, and Cherie R. Kagan ACS NANO, 8 (3) 2746-2754 (2014)
“Solution-Processed Phase-Change VO2 Metamaterials from Colloidal Vanadium Oxide (VOx) Nanocrystals,” Taejong Paik, Sung-Hoon Hong, E. Ashley Gaulding, Humeyra Caglayan, Thomas R. Gordon, Nader Engheta, Cherie R. Kagan, and Christopher B. Murray ACS NANO, 8 (1) 797-806 (2014)
2013
“Solution-Based Stoichiometric Control over Charge Transport in Nanocrystalline CdSe Devices,” David K. Kim, Aaron T. Fafarman, Benjamin T. Diroll, Silvia H Chan, Thomas R. Gordon, Christopher B. Murray, and Cherie R. Kagan ACS NANO, 7 (10) 8760-8770 (2013)
“Crystallographic anisotropy of the resistivity size effect in single crystal tungsten nanowires,” Dooho Choi, Matthew Moneck, Xuan Liu, Soong Ju Oh, Cherie R. Kagan, Kevin R. Coffey, & Katayun Barmak Scientific Reports, 3 (2591) 1-4 (2013)
“In-situ Repair of High-Performance, Flexible Nanocrystal Electronics for Large-Area Fabrication and Operation in Air,” Ji-Hyuk Choi, Soong Ju Oh, Yuming Lai, David K. Kim, Tianshuo Zhao, Aaron T. Fafarman, Benjamin T. Diroll, Christopher B. Murray, and Cherie R. Kagan ACS Nano, 7 (9) 8275-8283 (2013)
“Near-Infrared Metatronic Nanocircuits by Design,” Humeyra Caglayan*, Sung-Hoon Hong*, Brian Edwards, Cherie R. Kagan, and Nader Engheta Physical Review Letters, 111 073904 (2013)
* Indicates equal contribution
“Plasmonic Enhancement of Nanophosphor Upconversion Luminescence in Au Nanohole Arrays,” Marjan Saboktakin, Xingchen Ye, Uday K. Chettiar, Nader Engheta , Christopher B. Murray, and Cherie R. Kagan ACS Nano, 7 (8) 7186-7192 (2013)
“Competition of shape and interaction patchiness for self-assembling nanoplates,” Xingchen Ye, Jun Chen, Michael Engel, Jaime A. Millan, Wenbin Li, Liang Qi, Guozhong Xing, Joshua E. Collins, Cherie R. Kagan, Ju Li, Sharon C. Glotzer & Christopher B. Murray Nature Chemistry, 5 466-473 (2013)
“Stoichiometric Control of Lead Chalcogenide Nanocrystal Solids to Enhance Their Electronic and Optoelectronic Device Performance,” Soong Ju Oh, Nathaniel E. Berry, Ji-Hyuk Choi, E. Ashley Gaulding, Taejong Paik, Sung-Hoon Hong, Christopher B. Murray, and Cherie R. Kagan ACS Nano, 7 (3) 2413-2421 (2013)
“Engineering Catalytic Contacts and Thermal Stability: Gold/Iron Oxide Binary Nanocrystal Superlattices for CO Oxidation,” Yijin Kang, Xingchen Ye, Jun Chen, Liang Qi, Rosa E. Diaz, Vicky Doan-Nguyen, Guozhong Xing, Cherie R. Kagan, Ju Li, Raymond J. Gorte, Eric A. Stach, and Christopher B. Murray JACS, 135 4 1499-1505 (2013)
“Bistable Magnetoresistance Switching in Exchange-Coupled CoFe2O4-Fe3O4 Binary Nanocrystal Superlattices by Self-Assembly and Thermal Annealing,” Jun Chen, Xingchen Ye, Soong Ju Oh, James M. Kikkawa, Cherie R. Kagan, and Christopher B. Murray ACS Nano, 7(2) 1478-1486 (2013)
“Chemically Tailored Dielectric-to-Metal Transition for the Design of Metamaterials from Nanoimprinted Colloidal Nanocrystals,” Aaron T. Fafarman*, Sung-Hoon Hong*, Humeyra Caglayan, Xingchen Ye, Benjamin T. Diroll, Taejong Paik, Nader Engheta, Christopher B. Murray & Cherie R. Kagan Nano Letters, 13 (2) 350-357 (2013)
*=Equal Contributors
2012
“Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors,” David K. Kim*, Yuming Lai*, Benjamin T. Diroll, Christopher B. Murray & Cherie R. Kagan Nature Communications, 3 (1216) 1-6 (2012)
*=Equal Contributors
“The State of Nanoparticle-Based Nanoscience and Biotechnology: Progress, Promises, and Challenges,” Beatriz Pelaz, Sarah Jaber, Dorleta Jimenez de Aberasturi, Verena Wulf, Takuzo Aida, Jesus M. de la Fuente, Jochen Feldmann, Hermann E. Gaub, Lee Josephson, Cherie R. Kagan, Nicholas A. Kotov, Luis M. Liz-Marzan, Hedi Mattoussi, Paul Mulvaney, Christopher B. Murray, Andrey L. Rogach, Paul S. Weiss, Itamar Willner, and Wolfgang J. Parak, ACS Nano, 6 (10) 8468-8483 (2012)
“Metal Enhanced Upconversion Luminescence Tunable through Metal Nanoparticle-Nanophosphor Separation,” Marjan Saboktakin, Xingchen Ye, Soong Ju Oh, Sung-Hoon Hong, Aaron T. Fafarman, Uday K. Chettiar, Nader Engheta, Christopher B. Murray, and Cherie R. Kagan, ACS Nano, 6 (10) 8758-8766 (2012)
“Bandlike Transport in Strongly Coupled and Doped Quantum Dot Solids: A Route to High-Performance Thin-Film Electronics,” Ji-Hyuk Choi, Aaron T. Fafarman, Soong Ju Oh, Dong-Kyun Ko, David K. Kim, Benjamin T. Diroll, Shin Muramoto, J. Greg Gillen, Christopher B. Murray, and Cherie R. Kagan, Nano Letters, 12 (5) 2631-2638 (2012)
“Remote Doping and Schottky Barrier Formation in Strongly Quantum Confined Single PbSe Nanowire Field-Effect Transistors,” Soong Ju Oh, David K. Kim, and Cherie. R. Kagan, ACS Nano, 6 (5) 4328-4334 (2012)
“Wrinkles and deep folds as photonic structures in photovoltaics,” Jong Bok Kim, Pilnam Kim, Nicolas C. Pgard, Soong Ju Oh, Cherie R. Kagan, Jason W. Fleischer, Howard A. Stone and Yueh-Lin Loo, Nature Photonics, 6 327-332 (2012)
“An Improved Size-Tunable Synthesis of Monodisperse Gold Nanorods through the Use of Aromatic Additives,” Xingchen Ye, Linghua Jin, Humeyra Caglayan, Jun Chen, Guozhong Xing, Chen Zheng, Vicky Doan-Nguyen, Yijin Kang, Nader Engheta, Cherie R. Kagan, and Christopher B. Murray, ACS Nano, 6 2804-2817 (2012)
“Molecular Monolayers as Semiconducting Channels in Field Effect Transistors,” Cherie R. Kagan, Topics in Current Chemistry, 312 213-237, (2012)
2011
“Flexible, Low-Voltage, and Low-Hysteresis PbSe Nanowire Field-Effect Transistors,” David K. Kim, Yuming Lai, Tarun R. Vemulkar, and Cherie R. Kagan, ACS Nano, 5 (12) 10074-10083, (2011)
“Thiocyanate-capped PbS nanocubes: ambipolar transport enables quantum dot-based circuits on a flexible substrate,” Weon-kyu Koh , Sangameshwar R Saudari , Aaron T. Fafarman , Cherie R. Kagan , and Christopher B. Murray, Nano Letters, 11 (11) 4764-4767, (2011)
“Near-Infrared Absorption of Monodisperse Silver Telluride (Ag2Te) Nanocrystals and Photoconductive Response of Their Self-Assembled Superlattices,” Yu-Wen Liu, Dong-Kyun Ko, Soong Ju Oh, Thomas R. Gordon, Vicky Doan-Nguyen, Taejong Paik, Yijin Kang, Xingchen Ye, Linghua Jin, Cherie R. Kagan, and Christopher B. Murray, ACS Chemistry of Materials, 23 (21) 4657-4659, (2011)
“Diketopyrrolopyrrole-based p-bridged Donor-Acceptor Polymer for Photovoltaic Applications,” Wenting Li, Taegweon Lee, Soong Ju Oh, and Cherie R. Kagan, ACS Applied Materials and Interfaces, 3 (10) 3874-3883 (2011)
“Flexible Organic Electronics for Use in Neural Sensing,” Hank Bink*, Yuming Lai*, Sangamweshwar Rao Saudari, Brian Helfer, Jonathan Viventi, Jan Van der Spiegel, Brian Litt, Cherie Kagan, IEEE EMBC 2011 5400-5403 (2011)
* = Equal Contributors
“Thiocyanate Capped Nanocrystal Colloids: A Vibrational Reporter of Surface Chemistry and a Solution-based Route to Enhanced Coupling in Nanocrystal Solids,” Aaron T. Fafarman, Weon-kyu Koh, Benjamin T. Diroll, David K. Kim, Dong-Kyun Ko, Soong Ju Oh, Xingchen Ye, Vicky Doan-Nguyen, Michael R. Crump, Danielle C. Reifsnyder, Christopher B. Murray, and Cherie R. Kagan, Journal of the American Chemical Society, 133 (39), 15753-15761, (2011)
“Ambipolar and Unipolar PbSe Nanowire Field-Effect Transistors,” David K. Kim, Tarun R. Vemulkar, Soong-Ju Oh, Weon-kyu Koh, Christopher B. Murray and Cherie R. Kagan, ACS Nano, 5 (4), 3230-3236, (2011)
“Multiscale Periodic Assembly of Striped Nanocrystal Superlattice Films on a Liquid Surface,” Angang Dong, Jun Chen, Soong Ju Oh, Weon-kyu Koh, Faxian Xiu, Xingchen Ye, Dong-Kyun Ko, Kang L. Wang, Cherie R. Kagan, and Christopher B. Murray, Nano Letters, 11 (2), 841-846, (2011)
2010
“Comparison of the Energy-level Alignment of Thiolate- and Carbodithiolate-Bound Self-Assembled Monolayers on Gold,” Philip Schulz, Christopher D. Zangmeister, Yi-Lei Zhao, Paul R. Frail, Sangameshwar R. Saudari, Carlos A. Gonzalez, Cherie R. Kagan, Matthias Wuttig, and Roger D. van Zee, Journal of Physical Chemistry C, 114 (48), 20843-20851, (2010)
“Device Configurations for Ambipolar Transport in Flexible, Pentacene Transistors,” Sangameshwar Rao Saudari, Yu Jen Lin, Yuming Lai and Cherie R. Kagan, Advanced Materials, 44, 5063-5068, (2010)
“Small-Molecule Thiophene-C60 Dyads As Compatibilizers in Inverted Polymer Solar Cells,” Jong Bok Kim, Kathryn Allen, Soong Ju Oh, Stephanie Lee, Michael F. Toney, Youn Sang Kim, Cherie R. Kagan, Colin Nuckolls, and Yueh-Lin Loo, Chemistry of Materials, 22 (20), pp 5762-5773 (2010)
2009
“Ambipolar transport in solution-deposited pentacene transistors enhanced by molecular engineering of device contacts,” Sangameshwar Rao Saudari, Paul R. Frail, Cherie R. Kagan , Appl. Phys. Lett, 95, 023301 (2009)
2007
“Chemically Assisted Directed Assembly of Carbon Nanotubes for the Fabrication of Large-Scale Device Arrays,” G. S. Tulevski, J. Hannon, A. Afzali, Z. Chen, Ph. Avouris, C. R. Kagan, J. American Chemical Society, 129 (39), 11964 (2007)
“Alignment, Electronic Properties, Doping, and On-Chip Growth of Colloidal PbSe Nanowires,” D. V. Talapin, C. T. Black, C. R. Kagan, E. V. Shevchenko, A. Afzali, C. B. Murray, J. Phys. Chem. C, 111 (35), 13244 (2007)
“Synergistic Effects in Binary Nanocrystal Superlattices: Enhanced p-Type Conductivity in Self-Assembled PbTe/Ag2Te Thin Films,” J. J. Urban, D. V. Talapin, E. V. Shevchenko, C. R. Kagan, C. B. Murray, Nature Materials, 6 (2), 115 (2007).
“Molecular Assemblies: Briding the Gap to Form Molecular Junctions,” C. R. Kagan, C. Lin, in Multifunctional Conducting Molecular Materials, eds. G. Saito, F. Wudl, R. C. Haddon, K. Tanigaki, T. Enoki, H. E. Katz, M. Maesato, Royal Society of Chemistry, London 306, 248, (2007).
2006
“The Role of Chemical Contacts in Molecular Conductance,” N. D. Lang, C. R. Kagan, Nano Letters, 6, 2955 (2006).
“Enforced One-Dimensional Photoconductivity in Core-Cladding Hexabenzocorenenes,” Y. S. Cohen, S. Xiao, C. Nuckolls, C. R. Kagan, Nano Letters, 6, 2838 (2006).
“Organic and Organic-Inorganic Hybrid Molecular Devices,” Proceedings of the 12th International Micromachine/Nanotech Symposium, 31 (2006).
“Device Scaling in Sub-100 nm Pentacene FETs,” G. S. Tulevski, A. Afzali, T. O Graham, C. Nuckolls, C. R. Kagan, Applied Physics Letters, 89, 183101 (2006).
“Chemical Complementarity in the Contacts for Nanoscale Organic Field-Effect Transistors,” G. S. Tulevski, Q. Miao, A. Afzali, T. O. Graham, C. R. Kagan, C. Nuckolls, Journal of the American Chemical Society, 128, 1788 (2006).
2005
“Self-assembly and Oligomerization of Alkyne-Terminated Molecules on Metal and Oxide Surfaces,” L. Vyklicky, A. Afzali, C. R. Kagan, Langmuir, 21, 11574 (2005).
“Operational and Environmental Stability of Pentacene Thin Film Transistors,” C. R. Kagan, A. Afzali, T. O. Graham, Applied Physics Letters, 86, 193505 (2005).
“N-Sulfinylcarbamate-Pentacene Adduct; a Novel Pentacene Precursor Soluble in Alcohols,” A. Afzali, C. R. Kagan, G. Traub, Synthetic Metals, 155, 490 (2005).
“Electrostatic Field and Partial Fermi Level Pinning at the Pentacene-SiO2 Interface,” L. Chen, R. Ludeke, X. Cui, A. G. Schrott, C. R. Kagan, L. E. Brus, Journal of Physical Chemistry B, 109, 1834 (2005).
2004
“Molecular Transport Junctions: An Introduction,” C. R. Kagan, M. A. Ratner, MRS Bulletin, edited by C. R. Kagan, M. A. Ratner, 29, 376 (2004).
“Direct Assembly of Organic Semiconductors on Gate Oxides,” G. S. Tulevski, Q. Miao, M. Fukuto, R. Abram, B. Ocko, R. Pindak, C. R. Kagan, C. Nuckolls, Journal of the American Chemical Society, 126, 15048 (2004).
“Understanding the Molecular Transistor,” P. Solomon, C. R. Kagan in Future Trends in Microelectronics: The Nano, the Giga, and the Ultra, edited by S. Luryi, J. Xu, A. Zaslavsky, Wiley, NY (2004), p.168.
2003
“Evaluations and Considerations for Self-Assembled Monolayer Field-Effect Transistors,” C. R. Kagan, A. Afzali, R. Martel, L. M. Gignac, P. M. Solomon, A. Schrott, B. Ek, Nano Letters, 3, 119 (2003).
“Layer-by-Layer Growth of Metal-Metal Bonded Supramolecular Thin Films and Its Use in the Fabrication of Lateral Nanoscale Devices,” C. Lin and C. R. Kagan, Journal of the American Chemical Society, 125, 336 (2003).
“Organic-Inorganic Thin Film Transistors,” D. B. Mitzi, C. R. Kagan in Thin Film Transistors, edited by C. R. Kagan, P. S. Andry, Marcell-Dekker, NY, (2003), p. 475.
“Charge Transport on the Nanoscale,” D. Adams, L. Brus, C. E. D. Chidsey, S. Creager, C. Creutz, C. R. Kagan, P. Kamat, M. Lieberman, S. Lindsay, R. A. Marcus, R. M. Metzger, M. E. Michel-Beyerle, J. R. Miller, M. D. Newton, D. R. Rolison, O. Sankey, K. S. Schanze, J. Yardley, X. Zhu, Journal of Physical Chemistry B, 107, 6668 (2003).
2002
“An efficient synthesis of symmetrical oligothiophenes: Synthesis and transport properties of a soluble sexithiophene derivative,” A. Afzali, T. L. Breen, C. R. Kagan, Chemistry of Materials, 14(4), 1742 (2002) .
2001
“Patterning Organic-Inorganic Thin-Film Transistors Using Microcontact Printed Templates,” C. R. Kagan, T. L Breen, L. L. Kosbar, Applied Physics Letters 79 (21), 3536 (2001).
“Organic-Inorganic Electronics,” D. B. Mitzi, K. Chondroudis, C. R. Kagan, IBM Journal of Research and Development, 45, 29 (2001).
“Colloidal Synthesis of Nanocrystals and Nanocrystal Superlattices,” C. B. Murray, S. Sun, W. Gaschler, H. Doyle, T. Betley, C. R. Kagan, IBM Journal of Research and Development, 45, 47 (2001).
2000
“Synthesis and Characterization of Monodisperse Nanocrystals and Close Packed Nanocrystal Assemblies,” C. B. Murray, C. R. Kagan, M. G. Bawendi, Annual Review of Materials Science 30, 545, (2000).
“Photoconductivity in CdSe Quantum Dot Solids,” C. A. Leatherdale, C. R. Kagan, N. Y. Morgan, S. A. Empedocles, M. A. Kastner, and M. G. Bawendi, Physical Review B, 62, 2669 (2000).
1999
“Organic-Inorganic Hybrid Materials as Semiconducting Channels in Thin-Film Field-Effect Transistors,” C. R. Kagan, D. B. Mitzi, C. D. Dimitrakopoulos, Science, 286, 945 (1999).
“Design, Structure, and Optical Properties of Organic-Inorganic Perovskites Containing an Oligothiophene Chromophore,” David B. Mitzi, Konstantinos Chondroudis, Cherie R. Kagan, Inorganic Chemistry 38, 6246 (1999).
“Charge Generation and Transport in CdSe Semiconductor Quantum Dot Solids,” C. A. Leatherdale, N. Y. Morgan, C. R. Kagan, S. A. Empedocles, M. G. Bawendi, M. A. Kastner, MRS Proceedings 571, 191 (1999).
1998
“Submicron Confocal Raman Imaging of Holograms in Multicomponent Photopolymers,” C. R. Kagan, T. D. Harris, A. L. Harris, and M. L. Schilling, Journal of Chemical Physics, 108, 6892 (1998).
1996
“Long Range Resonance Transfer of Electronic Excitations in Close Packed CdSe Quantum Dot Solids,” C. R. Kagan, C. B. Murray, and M. G. Bawendi, Physical Review B, 54, 8633 (1996).
“Electronic Energy Transfer in CdSe Quantum Dot Solids,” C. R. Kagan, C. B. Murray, M. Nirmal, M. G. Bawendi, Physical Review Letters, 76, 1517 (1996).
1995
“Self Organization of CdSe Nanocrystallites into Three Dimensional Quantum Dot Superlattices,” C. B. Murray, C. R. Kagan, and M. G. Bawendi, Science, 270, 1335 (1995).
“Synthesis, Structural Characterization, and Optical Spectroscopy of Close Packed CdSe Nanocrystallites,” C. R. Kagan, C. B. Murray, M. G. Bawendi, MRS Proceedings, 358, 219 (1995).
1993
“Solution Precipitation of CdSe Quantum Dots,” C. R. Kagan, M. J. Cima, MRS Proceedings, 283, 841 (1993).
1992
“Ion-Exchange Reactions of Potassium Brannerite, K0.8(V0.8Mo1.2)O6,” Peter K. Davies and Cherie R. Kagan, Solid State Ionics, 53-56, 546-552 (1992).
Books and Journals Edited
“Molecular Transport Junctions,” edited by C. R. Kagan, M. A. Ratner, MRS Bulletin, Materials Research Society, PA, (2004).
“Thin Film Transistors,” edited by C. R. Kagan, P. S. Andry, Marcell-Dekker, NY, (2003).