@article{nokey,

title = {One-pot heat-up synthesis of short-wavelength infrared, colloidal InAs quantum dots},

author = {J Lee and T Zhao and S Yang and M Muduli and CB Murray and CR Kagan},

url = {https://pubs.aip.org/aip/jcp/article/160/7/071103/3266823},

doi = {10.1063/5.0187162},

year  = {2024},

date = {2024-02-21},

urldate = {2024-02-21},

journal = {The Journal of Chemical Physics},

volume = {160},

pages = {071103},

abstract = {III–V colloidal quantum dots (QDs) promise Pb and Hg-free QD compositions with which to build short-wavelength infrared (SWIR) optoelectronic devices. However, their synthesis is limited by the availability of group-V precursors with controllable reactivities to prepare monodisperse, SWIR-absorbing III–V QDs. Here, we report a one-pot heat-up method to synthesize ∼8 nm edge length (∼6.5 nm in height) tetrahedral, SWIR-absorbing InAs QDs by increasing the [In3+]:[As3+] ratio introduced using commercially available InCl3 and AsCl3 precursors and by decreasing the concentration and optimizing the volume of the reducing reagent superhydride to control the concentration of In(0) and As(0) intermediates through QD nucleation and growth. InAs QDs are treated with NOBF4, and their deposited films are exchanged with Na2S to yield n-type InAs QD films. We realize the only colloidal InAs QD photoconductors with responsivity at the technologically important wavelength of 1.55 μm.},

keywords = {colloids, nanocrystal, nanocrystal electronics, optical properties, quantum dots, semiconductors, spectroscopy, surface modification, synthesis, TEM, thin films, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Zhao2022,

title = {Engineering the Surface Chemistry of Colloidal InP Quantum Dots for Charge Transport},

author = {Tianshuo Zhao and Qinghua Zhao and Jaeyoung Lee and Shengsong Yang and Han Wang and Ming-Yuan Chuang and Yulian He and Sarah M. Thompson and Guannan Liu and Nuri Oh and Christopher B. Murray and Cherie R. Kagan},

url = {https://pubs.acs.org/doi/full/10.1021/acs.chemmater.2c01840},

doi = {10.1021/acs.chemmater.2c01840},

year  = {2022},

date = {2022-09-07},

urldate = {2022-09-07},

journal = {Chemistry of Materials},

volume = {34},

issue = {18},

pages = {8306–8315},

abstract = {Colloidal InP quantum dots (QDs) have emerged as potential candidates for constructing nontoxic QD-based optoelectronic devices. However, charge transport in InP QD thin-film assemblies has been limitedly explored. Herein, we report the synthesis of ∼8 nm edge length (∼6.5 nm in height), tetrahedral InP QDs and study charge transport in thin films using the platform of the field-effect transistor (FET). We design a hybrid ligand-exchange strategy that combines solution-based exchange with S2– and solid-state exchange with N3– to enhance interdot coupling and control the n-doping of InP QD films. Further modifying the QD surface with thin, thermally evaporated Se overlayers yields FETs with an average electron mobility of 0.45 cm2 V–1 s–1, ∼10 times that of previously reported devices, and a higher on–off current ratio of 103–104. Analytical measurements suggest lower trap-state densities and longer carrier lifetimes in the Se-modified InP QD films, giving rise to a four-time longer carrier diffusion length.},

keywords = {ligand exchange, ligands, mobility, quantum dots, thin films, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Zhao2021b,

title = {Impurities in Nanocrystal Thin-Film Transistors Fabricated by Cation Exchange},

author = {Qinghua Zhao and Shengsong Yang and Jonah J. Ng and Jun Xu and Yun Chang Choi and Christopher B. Murray and Cherie R. Kagan},

url = {https://doi.org/10.1021/acs.jpclett.1c01551},

doi = {10.1021/acs.jpclett.1c01551},

year  = {2021},

date = {2021-07-09},

urldate = {2021-07-09},

journal = {The Journal of Physical Chemistry Letters},

volume = {12},

number = {28},

pages = {6514–6518},

abstract = {Cation exchange is a versatile tool used to alter the composition of nanostructures and thus to design next-generation catalysts and photonic and electronic devices. However, chemical impurities inherited from the starting materials can degrade device performance. Here, we use a sequential cation-exchange process to convert PbSe into CdSe nanocrystal thin films and study their temperature-dependent electrical properties in the platform of the thin-film transistor. We show that residual Pb impurities have detrimental effects on the device turn-on, hysteresis, and electrical stability, and as the amount increases from 2% to 7%, the activation energy for carrier transport increases from 38(3) to 62(2) meV. Selection and surface functionalization of the transistor’s gate oxide layer and low-temperature atomic-layer deposition encapsulation of the thin-film channel suppress these detrimental effects. By conversion of the nanocrystal thin films layer upon layer, impurities are driven away from the gate–oxide interface and mobilities improve from 3(1) to 32(3) cm2 V–1 s–1.},

keywords = {CdSe, impurities, interfaces, nanocrystal electronics, thin films, transistors, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Zhao2021,

title = {Enhanced Carrier Transport in Strongly Coupled, Epitaxially Fused CdSe Nanocrystal Solids},

author = {Qinghua Zhao and Guillaume Gouget and Jiacen Guo and Shengsong Yang and Tianshuo Zhao and Daniel B. Straus and Chengyang Qian and Nuri Oh and Han Wang and Christopher B. Murray and Cherie R. Kagan},

url = {https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.1c00860},

doi = {10.1021/acs.nanolett.1c00860},

year  = {2021},

date = {2021-04-01},

journal = {Nano Letters},

volume = {21},

number = {7},

pages = {3318–3324},

abstract = {Strongly coupled, epitaxially fused colloidal nanocrystal (NC) solids are promising solution-processable semiconductors to realize optoelectronic devices with high carrier mobilities. Here, we demonstrate sequential, solid-state cation exchange reactions to transform epitaxially connected PbSe NC thin films into Cu2Se nanostructured thin-film intermediates and then successfully to achieve zinc-blende, CdSe NC solids with wide epitaxial necking along {100} facets. Transient photoconductivity measurements probe carrier transport at nanometer length scales and show a photoconductance of 0.28(1) cm2 V–1 s–1, the highest among CdSe NC solids reported. Atomic-layer deposition of a thin Al2O3 layer infiltrates and protects the structure from fusing into a polycrystalline thin film during annealing and further improves the photoconductance to 1.71(5) cm2 V–1 s–1 and the diffusion length to 760 nm. We fabricate field-effect transistors to study carrier transport at micron length scales and realize high electron mobilities of 35(3) cm2 V–1 s–1 with on–off ratios of 106 after doping.},

keywords = {nanocrystal electronics, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Yang2018,

title = {Charge Transport Modulation in PbSe Nanocrystal Solids by AuxAg1–x Nanoparticle Doping},

author = {Haoran Yang and Eric Wong and Tianshuo Zhao and Jennifer D. Lee and Huolin L. Xin and Miaofang Chi and Blaise Fleury and Han-Yu Tang and E. Ashley Gaulding and Cherie R. Kagan and Christopher B. Murray},

url = {https://pubs.acs.org/doi/10.1021/acsnano.8b03112},

doi = {10.1021/acsnano.8b03112},

year  = {2018},

date = {2018-08-27},

journal = {ACS Nano},

volume = {12},

number = {9},

pages = {9091–9100},

abstract = {Nanocrystal (NC) solids are an exciting class of materials, whose physical properties are tunable by choice of the NCs as well as the strength of the interparticle coupling. One can consider these NCs as “artificial atoms” in analogy to the formation of condensed matter from atoms. Akin to atomic doping, the doping of a semiconducting NC solid with impurity NCs can drastically alter its electronic properties. A high degree of complexity is possible in these artificial structures by adjusting the size, shape, and composition of the building blocks, which enables “designer” materials with targeted properties. Here, we present the doping of the PbSe NC solids with a series of AuxAg1–x alloy nanoparticles (NPs). A combination of temperature-dependent electrical conductance and Seebeck coefficient measurements and room-temperature Hall effect measurements demonstrates that the incorporation of metal NPs both modifies the charge carrier density of the NC solids and introduces energy barriers for charge transport. These studies point to charge carrier injection from the metal NPs into the PbSe NC matrix. The charge carrier density and charge transport dynamics in the doped NC solids are adjustable in a wide range by employing the AuxAg1–x NP with different Au:Ag ratio as dopants. This doping strategy could be of great interest for thermoelectric applications taking advantage of the energy filtering effect introduced by the metal NPs.},

keywords = {doping, nanocrystal electronics, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Paik2018,

title = {Photocatalytic Hydrogen Evolution from Substoichiometric Colloidal WO3–x Nanowires},

author = {Taejong Paik and Matteo Cargnello and Thomas R. Gordon and Sen Zhang and Hongseok Yun and Jennifer D. Lee and Ho Young Woo and Soong Ju Oh and Cherie R. Kagan and Paolo Fornasiero and Christopher B. Murray},

url = {https://pubs.acs.org/doi/10.1021/acsenergylett.8b00925},

doi = {10.1021/acsenergylett.8b00925},

year  = {2018},

date = {2018-06-29},

journal = {ACS Energy Letters},

volume = {3},

number = {8},

pages = {1904–1910},

abstract = {We report direct photocatalytic hydrogen evolution from substoichiometric highly reduced tungsten oxide (WOx) nanowires (NWs) using sacrificial alcohol. WOx NWs are synthesized via nonaqueous colloidal synthesis with a diameter of about 4 nm and an average length of about 250 nm. As-synthesized WOx NWs exhibit a broad absorption across the visible to infrared regions attributed to the presence of oxygen vacancies. The optical band gap is increased in these WOx NWs compared to stoichiometric bulk tungsten oxide (WO3) powders as a result of the Burstein–Moss shift. As a consequence of this increase, we demonstrate direct photocatalytic hydrogen production from WOx NWs through alcohol photoreforming. The stable H2 evolution on platinized WOx NWs is observed under conditions in which platinized bulk WO3 and bulk WO2.9 powders either do not show activity or show very low rates, suggesting that increased surface area and specific exposed facets are key for the improved performance of WOx NWs. This work demonstrates that control of size and composition can lead to unexpected and beneficial changes in the photocatalytic properties of semiconductor materials.},

keywords = {nanowires, thermodynamic modeling, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Elbaz2017,

title = {Unbalanced Hole and Electron Diffusion in Lead Bromide Perovskites},

author = {Giselle A. Elbaz and Daniel B. Straus and Octavi E. Semonin and Trevor D. Hull and Daniel W. Paley and Philip Kim and Jonathan S. Owen and Cherie R. Kagan and Xavier Roy},

url = {https://pubs.acs.org/doi/10.1021/acs.nanolett.6b05022},

doi = {10.1021/acs.nanolett.6b05022},

year  = {2017},

date = {2017-02-27},

journal = {Nano Letters},

volume = {17},

number = {3},

pages = {1727–1732},

abstract = {We use scanning photocurrent microscopy and time-resolved microwave conductivity to measure the diffusion of holes and electrons in a series of lead bromide perovskite single crystals, APbBr3, with A = methylammonium (MA), formamidinium (FA), and Cs. We find that the diffusion length of holes (LDh+ ∼ 10–50 μm) is on average an order of magnitude longer than that of electrons (LDe– ∼ 1–5 μm), regardless of the A-type cation or applied bias. Furthermore, we observe a weak dependence of LD across the A-cation series MA > FA > Cs. When considering the role of the halide, we find that the diffusion of holes in MAPbBr3 is comparable to that in MAPbI3, but the electron diffusion length is up to five times shorter. This study shows that the disparity between hole and electron diffusion is a ubiquitous feature of lead halide perovskites. As with organic photovoltaics, this imbalance will likely become an important consideration in the optimization of lead halide perovskite solar cells.},

keywords = {perovskites, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Wu2017,

title = {Directional Carrier Transfer in Strongly Coupled Binary Nanocrystal Superlattice Films Formed by Assembly and in Situ Ligand Exchange at a Liquid–Air Interface},

author = {Yaoting Wu and Siming and Natalie Gogotsi and Tianshuo Zhao and Blaise Fleury and Cherie R. Kagan and Christopher B. Murray and Jason B. Baxter},

url = {https://pubs.acs.org/doi/abs/10.1021/acs.jpcc.6b12327},

doi = {abs/10.1021/acs.jpcc.6b12327},

year  = {2017},

date = {2017-02-05},

journal = {The Journal of Physical Chemistry C},

volume = {121},

number = {8},

pages = {4146–4157},

abstract = {Two species of monodisperse nanocrystals (NCs) can self-assemble into a variety of complex 2D and 3D periodic structures, or binary NC superlattice (BNSL) films, based on the relative number and size of the NCs. BNSL films offer great promise for both fundamental scientific studies and optoelectronic applications; however, the utility of as-assembled structures has been limited by the insulating ligands that originate from the synthesis of NCs. Here we report the application of an in situ ligand exchange strategy at a liquid–air interface to replace the long synthesis ligands with short ligands while preserving the long-range order of BNSL films. This approach is demonstrated for BNSL structures consisting of PbSe NCs of different size combinations and ligands of interest for photovoltaic devices, infrared detectors, and light-emitting diodes. To confirm enhanced coupling introduced by ligand exchange, we show ultrafast (∼1 ps) directional carrier transfer across the type-I heterojunction formed by NCs of different sizes within ligand-exchanged BNSL films. This approach shows the potential promise of functional BNSL films, where the local and long-range energy landscape and electronic coupling can be adjusted by tuning NC composition, size, and interparticle spacing.},

keywords = {nanoparticle assembly, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Oh2016,

title = {Engineering the surface chemistry of lead chalcogenide nanocrystal solids to enhance carrier mobility and lifetime in optoelectronic devices},

author = {S. J. Oh and D. B. Straus and T. Zhao and J.-H. Choi and S.-W. Lee and A. Gaulding and C. B. Murray and C. R. Kagan},

url = {https://pubs.rsc.org/en/content/articlelanding/2016/cc/c6cc07916d#!divAbstract},

year  = {2016},

date = {2016-12-12},

journal = {Chemical Communications},

volume = {53},

number = {4},

pages = {728-731},

abstract = {We introduce a stepwise, hybrid ligand-exchange method for lead chalcogenide nanocrystal (NC) thin films using the compact-inorganic ligand thiocyanate and the short organic ligand benzenediothiolate. Spectroscopic and device measurements show that hybrid exchange enhances both carrier mobility and lifetime in NC thin films. The increased mobility-lifetime product achieved by this method enables demonstration of optoelectronic devices with enhanced power conversion and quantum efficiency.},

keywords = {nanocrystal electronics, synthesis, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Oh2016b,

title = {Mapping the Competition between Exciton Dissociation and Charge Transport in Organic Solar Cells},

author = {Soong Ju Oh and Jongbok Kim and Jeffrey M. Mativetsky and Yueh-Lin Loo and Cherie R. Kagan},

url = {https://pubs.acs.org/doi/abs/10.1021/acsami.6b07810},

doi = {10.1021/acsami.6b07810},

year  = {2016},

date = {2016-10-03},

journal = {ACS Applied Materials & Interfaces},

volume = {8},

number = {42},

pages = {28743–28749},

abstract = {The competition between exciton dissociation and charge transport in organic solar cells comprising poly(3-hexylthiophene) [P3HT] and phenyl-C61-butyric acid methyl ester [PCBM] is investigated by correlated scanning confocal photoluminescence and photocurrent microscopies. Contrary to the general expectation that higher photoluminescence quenching is indicative of higher photocurrent, microscale mapping of bulk-heterojunction solar-cell devices shows that photoluminescence quenching and photocurrent can be inversely proportional to one another. To understand this phenomenon, we construct a model system by selectively laminating a PCBM layer onto a P3HT film to form a PCBM/P3HT planar junction on half of the device and a P3HT single junction on the other half. Upon thermal annealing to allow for interdiffusion of PCBM into P3HT, an inverse relationship between photoluminescence quenching and photocurrent is observed at the boundary between the PCBM/P3HT junction and P3HT layer. Incorporation of PCBM in P3HT works to increase photoluminescence quenching, consistent with efficient charge separation, but conductive atomic force microscopy measurements reveal that PCBM acts to decrease P3HT hole mobility, limiting the efficiency of charge transport. This suggests that photoluminescence-quenching measurements should be used with caution in evaluating new organic materials for organic solar cells.},

keywords = {organic solar cells, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Semonin2016,

title = {Limits of Carrier Diffusion in n-Type and p-Type CH3NH3PbI3 Perovskite Single Crystals},

author = {Octavi E. Semonin and Giselle A. Elbaz and Daniel B. Straus and Trevor D. Hull and Daniel W. Paley and Arend M. van der Zande and James C. Hone and Ioannis Kymissis and Cherie R. Kagan and Xavier Roy and Jonathan S. Owen},

url = {https://pubs.acs.org/doi/abs/10.1021/acs.jpclett.6b01308},

doi = {10.1021/acs.jpclett.6b01308},

year  = {2016},

date = {2016-08-15},

journal = {The Journal of Physical Chemistry Letters},

volume = {7},

number = {17},

pages = {3510–3518},

abstract = {Using a combination of scanning photocurrent microscopy (SPCM) and time-resolved microwave conductivity (TRMC) measurements, we monitor the diffusion and recombination of photoexcited charges in CH3NH3PbI3 perovskite single crystals. The majority carrier type was controlled by growing crystals in the presence or absence of air, allowing the diffusion lengths of electrons (LDe–) and holes (LDh+) to be directly imaged with SPCM (LDe– = 10–28 μm, LDh+ = 27–65 μm). TRMC measurements reveal a photogenerated carrier mobility (μh + μe) of 115 ± 15 cm2 V–1 s–1 and recombination that depends on the excitation intensity. From the intensity dependence of the recombination kinetics and by accounting for carrier diffusion away from the point of photogeneration, we extract a second-order recombination rate constant (krad = 5 ± 3 × 10–10 cm3/s) that is consistent with the predicted radiative rate. First-order recombination at low photoexcited carrier density (knrp-type = 1.0 ± 0.3 × 105 s–1, knrn-type = 1.5 ± 0.3 × 105 s–1) is slower than that observed in CH3NH3PbI3 thin films or in GaAs single crystals with AlGaAs passivation layers. By accounting for the dilution of photogenerated carriers upon diffusion, and by combining SPCM and TRMC measurements, we resolve disagreement between previous reports of carrier diffusion length.},

keywords = {perovskites, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Goodwin2016,

title = {The effects of inorganic surface treatments on photogenerated carrier mobility and lifetime in PbSe quantum dot thin films},

author = {E.D. Goodwin and Daniel B. Straus and E. Ashley Gaulding and Christopher B. Murray and Cherie R. Kagan},

url = {https://www.sciencedirect.com/science/article/abs/pii/S0301010415002220},

doi = {10.1016/j.chemphys.2015.07.031},

year  = {2016},

date = {2016-06-01},

journal = {Chemical Physics },

volume = {471},

pages = {81-88},

abstract = {We used flash-photolysis, time-resolved microwave conductivity (TRMC) to probe the carrier mobility and lifetime in PbSe quantum dot (QD) thin films treated with solutions of the metal salts of Na2Se and PbCl2. The metal salt treatments tuned the Pb:Se stoichiometry and swept the Fermi energy throughout the QD thin film bandgap. A stoichiometric imbalance favoring excess Se heavily p-doped the QD thin film, shifted the Fermi energy toward the valence band, and yielded the highest TRMC mobility and lifetime. Introducing Pb first compensated the p-doping and shifted the Fermi level through mid-gap, decreasing the TRMC mobility. Further Pb addition created an excess of Pb, n-doped the QD thin film, moved the Fermi level to near the conduction band, and again increased the TRMC mobility. The increase in TRMC mobility as the Fermi energy was shifted toward the band edges by non-stoichiometry is consistent with the QD thin film density of states.},

keywords = {mobility, PbSe, quantum dots, surface modification, thin films, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Saudari2015,

title = {Electron and hole transport in ambipolar, thin film pentacene transistors },

author = {Sangameshwar R. Saudari and Cherie R. Kagan},

url = {https://pubs.aip.org/aip/jap/article/117/3/035501/167833/Electron-and-hole-transport-in-ambipolar-thin-film},

doi = {10.1063/1.4906145},

year  = {2015},

date = {2015-01-21},

journal = {Journal of Applied Physics},

volume = {117},

pages = {035501 },

abstract = {Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.},

keywords = {organic compounds, transistors, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Goodwin2014,

title = {Effects of Post-Synthesis Processing on CdSe Nanocrystals and Their Solids: Correlation between Surface Chemistry and Optoelectronic Properties},

author = {E. D. Goodwin and Benjamin T. Diroll and Soong Ju Oh and Taejong Paik and Christopher B. Murray and Cherie R. Kagan},

url = {https://pubs.acs.org/doi/full/10.1021/jp5076912},

doi = {10.1021/jp5076912},

year  = {2014},

date = {2014-10-21},

urldate = {2014-10-21},

journal = {The Journal of Physical Chemistry C},

volume = {118},

number = {46},

pages = {27097–27105},

abstract = {In this work, we report the effects on CdSe nanocrystal (NC) surface chemistry of acetone and methanol when used as the antisolvents for NC washing and as the solvents for ligand exchange of NC solids with ammonium thiocyanate (NH4SCN). We find that NCs washed with methanol have significantly fewer remaining organic ligands and lower photoluminescence quantum yield than those washed with acetone. When used as the ligand exchange solvent, methanol leaves more organic ligands and introduces fewer bound thiocyanates on the NC surface than when acetone is used. We demonstrate the effect of these different surface chemistries on NC solid optoelectronic properties through photoconductivity measurements, showing a greater photocurrent in NC solids with greater organic ligand coverage. We also show that NC washing with methanol or ligand exchange with NH4SCN in methanol removes a significant number of surface Cd atoms from the NCs, creating Cd vacancies that act as traps for recombination. Independent of the wash and exchange process, the NC surface may be repaired by introducing CdCl2 to the NC surface, enhancing the measured photocurrent.},

keywords = {CdSe, nanocrystal, nanocrystal electronics, optical properties, optical stability, semiconductors, surface modification, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Oh2014,

title = {Engineering Charge Injection and Charge Transport for High Performance PbSe Nanocrystal Thin Film Devices and Circuits},

author = {Soong Ju Oh and Zhuqing Wang and Nathaniel E. Berry and Ji-Hyuk Choi and Tianshuo Zhao and E. Ashley Gaulding and Taejong Paik and Yuming Lai and Christopher B. Murray and Cherie R. Kagan},

url = {https://pubs.acs.org/doi/full/10.1021/nl502491d},

doi = {10.1021/nl502491d},

year  = {2014},

date = {2014-10-09},

journal = {Nano Letters},

volume = {14},

number = {11},

pages = {6210–6216},

abstract = {We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal–nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.},

keywords = {doping, interfaces, ligand exchange, mobility, nanocrystal, nanocrystal electronics, PbSe, surface interactions, surface modification, thin films, transistors, transport},

pubstate = {published},

tppubtype = {article}

}

@article{Turk2014,

title = {Gate-Induced Carrier Delocalization in Quantum Dot Field Effect Transistors},

author = {Michael E. Turk and Ji-Hyuk Choi and Soong Ju Oh and Aaron T. Fafarman and Benjamin T. Diroll and Christopher B. Murray and Cherie R. Kagan and James M. Kikkawa},

url = {https://pubs.acs.org/doi/full/10.1021/nl5029655},

doi = {10.1021/nl5029655},

year  = {2014},

date = {2014-08-29},

journal = {Nano Letters},

volume = {14},

number = {10},

pages = {5948–5952},

abstract = {We study gate-controlled, low-temperature resistance and magnetotransport in indium-doped CdSe quantum dot field effect transistors. We show that using the gate to accumulate electrons in the quantum dot channel increases the “localization product” (localization length times dielectric constant) describing transport at the Fermi level, as expected for Fermi level changes near a mobility edge. Our measurements suggest that the localization length increases to significantly greater than the quantum dot diameter.},

keywords = {CdSe, magnetotransport, nanocrystal, nanocrystal electronics, quantum dots, transistors, transport},

pubstate = {published},

tppubtype = {article}

}