Advanced Architecture for Colloidal PbS Quantum Dot Solar Cells Exploiting a CdSe Quantum Dot Buffer Layer
We introduce a CdI2-treated CdSe quantum dot buffer layer at the junction between ZnO nanoparticles and PbS quantum dots to improve the performance of the solar cell devices. After optimizing the carrier concentration and energy band alignment of the CdSe QD buffer layer in the heterojunction, we find suppressed interface recombination and additional photogenerated carriers attributed to the buffer layer, leading to a 25% increase in solar power conversion efficiency.
Building Devices from Colloidal Quantum Dots
Kagan, Lifshitz, Sargent, and Talapin review recent progress in tailoring colloidal quantum dots and their assemblies to build electronic and optoelectronic devices.
Roadmap on Optical Metamaterials
Kagan and Murray describe using nanoparticles as building blocks for the design of optical metamaterials.
Exploiting the Colloidal Nanocrystal Library to Construct Electronic Devices
We exploit metallic, semiconducting, and insulating colloidal nanocrystals and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices on flexible plastics using solution-based processes.
At the Nexus of Food Security and Safety: Opportunities for Nanoscience and Nanotechnology
Kagan describes the opportunities for nanoscience and nanotechnology to address the grand challenge at the nexus of food security and safety in an ACS Nano editorial.
Increased Carrier Mobility and Lifetime in CdSe Quantum Dot Thin Films through Surface Trap Passivation and Doping
We investigate the effect of introducing indium in CdSe QD thin films on the dark mobility and the photogenerated carrier mobility and lifetime using field-effect transistor (FET) and time-resolved microwave conductivity (TRMC) measurements. As the amount of indium increases, the FET and TRMC mobilities and the TRMC lifetime increase. The increase in mobility and lifetime is consistent with increased indium passivating midgap and band-tail trap states and doping the films, shifting the Fermi energy closer to and into the conduction band.
Charge transport in strongly coupled quantum dot solids
Kagan and Murray review the chemical and physical origins of high mobility charge transport in quantum dot (QD) solids that is being exploited in devices. They also present future prospects for QD materials and device design.
Flexible, High-Speed CdSe Nanocrystal Integrated Circuits
We report large area, flexible, photopatterned integrated circuits based on CdSe nanocrystal semiconductors. Our results show high performance devices with transistor mobilities exceeding 10 cm2
/Vs, amplifiers with ~7 kHz bandwidth, and oscillators with sub-10 Ás stage delays as well as NAND and NOR logic gates.