We report large area, flexible, photopatterned integrated circuits based on CdSe nanocrystal semiconductors. Our results show high performance devices with transistor mobilities exceeding 10 cm2
/Vs, amplifiers with ~7 kHz bandwidth, and oscillators with sub-10 µs stage delays as well as NAND and NOR digital logic gates.
(Top) Photograph of completed sample and output characteristics of NAND and NOR logic gates. (Bottom) Optical micrograph and output characteristics of a five-stage nanocrystal ring oscillator with a sixth-stage buffer operating at a supply voltage of 5 V (VDD).
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“Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors
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“Engineering Charge Injection and Charge Transport for High Performance PbSe Nanocrystal Thin Film Devices and Circuits
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